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savantic semiconductor product specification silicon npn power transistors 2N6357 description with to-3 package high dc current gain darlington applications for general-purpose amplifier and low-frequency switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a i b base current 0.5 a p d total power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.09 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6357 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdwon voltage i c =0.2a ;i b =0 60 v v cesat-1 collector-emitter saturation voltage i c =10a ;i b =40ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =20a ;i b =1a 4.0 v v be sat base-emitter saturation voltage i c =20a ;i b =1a 4.0 v v be base-emitter on voltage i c =10a ; v ce =4v 2.8 v i ceo collector cut-off current v ce =60v;i b =0 1.0 ma i cbo collector cut-off current v cb =80v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe-1 dc current gain i c =4a ; v ce =5v 500 5000 h fe-2 dc current gain i c =20a ; v ce =5v 100
savantic semiconductor product specification 3 silicon npn power transistors 2N6357 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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